Planar CBRAM devices using non-cleanroom techniques as RF switches-Reference-Cited by-同舟云学术

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Planar CBRAM devices using non-cleanroom techniques as RF switches

Published:2023-05-20 Issue:6 Volume:129 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Mahato Prabir,Jayakrishnan Methapettyparambu Purushothama,Vena Arnaud,Perret Etienne

Funder

ERC Consolidator grant - ScattererID

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-023-06687-x.pdf

Reference57 articles.

1. R.A. Radouan Ait Mouha, Internet of things (IoT). J. Data Anal. Inf. Process. 09(02), 77–101 (2021). https://doi.org/10.4236/jdaip.2021.92006

2. A. Yastrebova, R. Kirichek, Y. Koucheryavy, A. Borodin, A. Koucheryavy, Future networks 2030: architecture requirements. In International Congress Ultra Modern Telecommunications Control System Work, vol. 2018 (2019). https://doi.org/10.1109/ICUMT.2018.8631208

3. N. Wainstein, G. Adam, E. Yalon, S. Kvatinsky, Radiofrequency switches based on emerging resistive memory technologies—a survey. Proc. IEEE 109(1), 77–95 (2021). https://doi.org/10.1109/JPROC.2020.3011953

4. J.A. Del Alamo, Nanometre-scale electronics with III–V compound semiconductors. Nature 479(7373), 317–323 (2011). https://doi.org/10.1038/nature10677

5. C. Wen et al., A phase-change via-reconfigurable CMOS. IEEE Trans. Electron Devices 60(12), 3979–3988 (2013)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel materials and methods for fabricating memristors for use in RF applications;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

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