Author:
Martin J. Saint,Aubry-Fortuna V.,Bournel A.,Dollfus P.,Galdin S.,Chassat C.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. M. Lundstrom and Z. Ren, “Essential physics of carrier transport in nanoscale MOSFETs,” IEEE Trans. Electron Dev., 49(1), 133 (2002).
2. J. Saint Martin, A. Bournel, and P. Dollfus, “On the ballistic transport in nanometer-scaled DG MOSFETs,” IEEE Trans. Electron Dev., 51(7), 1148 (2004).
3. V. Aubry-Fortuna, P. Dollfus, and S. Galdin-Retailleau, “Electron effective mobility in strained Si/ Si1−xGex MOS devices using Monte Carlo simulation,” to be published (cond-mat/0411340).
4. S. Richard, F. Aniel, and G. Fishman, “Energy-band structure in strained silicon: A 20-band k.p and Bir-Pikus Hamiltonian model,” J. Appl. Phys., 94(3), 1795 (2003).
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