Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2969661
Reference26 articles.
1. Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length
2. Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium
3. Monte Carlo study of apparent mobility reduction in nano-MOSFETs
4. Experimental Comparison Between Sub-0.1-$\mu{\hbox{m}}$ Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility
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