Experimental Comparison Between Sub-0.1-$\mu{\hbox{m}}$ Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility-Reference-Cited by-同舟云学术

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Experimental Comparison Between Sub-0.1-$\mu{\hbox{m}}$ Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility

Published:2006-11 Issue:6 Volume:5 Page:643-648
ISSN:1536-125X
Container-title:IEEE Transactions On Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Widiez Julie,Poiroux Thierry,Vinet Maud,Mouis Mireille,Deleonibus Simon

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/4011917/04011944.pdf?arnumber=4011944

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field;Nanotechnology;2019-06-04

2. Accurate semi empirical predictive model for doped and undoped double gate MOSFET;Solid-State Electronics;2018-11

3. Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With Underlap;IEEE Transactions on Electron Devices;2018-09

4. Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance;Journal of Computational Electronics;2016-03-21

5. Bibliography;The Wigner Monte Carlo Method for Nanoelectronic Devices;2013-03-20

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