Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. S. Jagar et al., “A SPICE model for thin-film transistors fabricated on grain-enhanced polysilicon film,” IEEE Trans. Electron Devices, 50, 1103 (2003).
2. A. Wang and K.C. Saraswat, “A strategy for modeling of variations due to grain size in polycrystalline thin-film transistors,” IEEE Trans. Electron Devices, 47, 1035 (2000).
3. G.A. Armstrong et al., “Modeling of laser-annealed polysilicon TFT characteristics,” IEEE Electron Device Letters, 18, 315 (1997).
4. M.S. Shur et al., “Modeling and scaling of a-Si:H and poly-Si Thin Film transistors,” in Material Research Society Proceeding, Amorphous and Microcrystalline Silicon Technology, (1997) vol. 467.
5. B. Iniguez et al., “Unified model for short-channel poly-Si TFTs,” Solid-State Electronics, 43, 1821 (1999).
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献