Author:
Iñiguez Benjamı́n,Xu Zheng,Fjeldly Tor A.,Shur Michael S.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Numerical simulation of polycrystalline-silicon MOSFETs;Guerrieri;IEEE Trans. Electron Dev.,1986
2. model for polysilicon MOSFETs;Anwar;IEEE Trans. Electron Dev.,1987
3. model of current–voltage characteristics in polycrystalline silicon thin-film transistors;Serikawa;IEEE Trans. Electron Dev.,1987
4. Threshold voltage, field-effect mobility, and gate-to-channel capacitance in polysilicon TFTs;Jacunski;IEEE Trans. Electron Dev.,1996
5. Jacunski, M., Characterization and modeling of short-channel polysilicon thin-film transistors, PhD Dissertation, University of Virginia, 1997.
Cited by
51 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献