Author:
Kumar Sandeep,Chatterjee Arun Kumar,Pandey Rishikesh
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference44 articles.
1. Riyadi, M.A., Suseno, J.E., Ismail, R.: The future of non-planar nanoelectronics MOSFET devices: A review. J. Appl. Sci. 10, 2136–2146 (2010)
2. https://veturebeat.com/2020/01/07/a-bright-future-for-moores-law (2020) Accessed 07 January 2020
3. Lee, C.W., Afzalian, A., Akhvan, N.D., Yan, R., Ferain, I.: Colinge, J.P.: Junctionless multigate field-effect transistor. Appl Phys Lett 94, 053511 (2009)
4. Navaroz, A.: Semiconductor-On-Insulator Materials for Nanoelectronics Applications Engineering Materials. Springer-Verlag, Heidelberg, Berlin (2011)
5. Taur, Y., Chen, H.P., Wang, W., Lo, S.H., Wann, C.: ON-off charge-voltage characteristics and dopant number fluctuation effects in junctionless double-gate MOSFETs. IEEE Electron Device Lett. 59, 863–866 (2012)
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献