Author:
Larcher Luca,Padovani Andrea,Vandelli Luca
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. Kim, Y.-H., Lee, J.C.: Reliability characteristics of high-k dielectrics. Microelectron. Reliab. 44, 183–193 (2004)
2. Young, C.D., et al.: Electron trap generation in high-κ gate stacks by constant voltage stress. IEEE Trans. Device Mater. Reliab. 6, 123–131 (2006)
3. Bersuker, G., et al.: The effect of interfacial layer properties on the performance of Hf-based gate stack devices. J. Appl. Phys. 100, 094108 (2006)
4. Bersuker, G., et al.: Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric. IEDM Tech. Dig. 791–794 (2008)
5. Chau, R., Datta, S., Doczy, M., Doyle, B., Kavalieros, J., Metz, M.: High-k/metal–gate stack and its MOSFET characteristics. IEEE Electron Device Lett. 25, 408–410 (2004)
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