Author:
Khan M. N.,Ahmed U. F.,Ahmed M. M.,Rehman S.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
14 articles.
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1. Modeling of access resistances and channel temperature estimation for GaN HEMT;Journal of Thermal Analysis and Calorimetry;2022-05-13
2. Performance Prediction of GaN HEMTs Using Angelov and Curtice Models;2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT);2022-04-21
3. Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model;2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE);2022-02-24
4. Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors;IEEE Transactions on Device and Materials Reliability;2021-12
5. Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model;2021 International Conference on Electronics, Communications and Information Technology (ICECIT);2021-09-14