Modeling of access resistances and channel temperature estimation for GaN HEMT
Author:
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics
Link
https://link.springer.com/content/pdf/10.1007/s10973-022-11371-y.pdf
Reference35 articles.
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3. Alim MA, Rezazadeh AA, Gaquiere C. Temperature effect on DC and equivalent circuit parameters of 0.15-μm gate length GaN/SiC HEMT for microwave applications. IEEE Trans Microw Theory Tech. 2016;64:3483–91. https://doi.org/10.1109/TMTT.2016.2604815.
4. Cheng X, Li M, Wang Y. An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect. Solid State Electron. 2010;54:42–7. https://doi.org/10.1016/j.sse.2009.09.026.
5. Vitanov S, Palankovski V, Maroldt S, et al. Physics-based modeling of GaN HEMTs. IEEE Trans Electron Dev. 2012;59:685–93. https://doi.org/10.1109/TED.2011.2179118.
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