Author:
Sacconi Fabio,Povolotskyi Michael,Di Carlo Aldo
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Daumiller, I., Theron, D., Gaquiere, C., Vescan, A., Dietrich, R., Wieszt, A., Leier, H., Vetury, R., Mishra, U.K., Smorchkova, I.P., Keller, S., Nguyen, C., Kohn, E.: Current instabilities in gan-based devices. IEEE Electron Device Letters 22, 62 (2001)
2. Sleiman, A., Di Carlo, A., Verzellesi, G., Meneghesso, E., Zanoni, E.: Current collapse associated with surface states in gan-based hemt’s theoretical/experimental investigations. In: Wachutka, G., Schrag, G. (eds.), Simulation of Semiconductor Processes and Devices. Springer Verlag, Wien (2004)
3. Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., Eastman, L.F.: The effect of surface passivation on the microwave characteristics of undoped algan-gan hemts. IEEE Electron Device Letters 21, 268 (2000)
4. Shealty, J.R., Prunty, T.R., Chumbes, E.M., Ridley, B.K.: Journal of Crystal Growth 250, 7 (2003)
5. Jogai, B.: Three-dimensional strain field calculations in coupled InAs/GaAs quantum dots. Journal of Applied Physics 88, 5050 (2000)
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