Top-down fabrication of AlGaN/GaN nanoribbons
Author:
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3544048
Reference16 articles.
1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2. A Two-Dimensional Analytical Solution for Short-Channel Effects in Nanowire MOSFETs
3. 12 GHz $F_{\rm MAX}$GaN/AlN/AlGaN Nanowire MISFET
4. Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor
5. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
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2. DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer;Physica Scripta;2024-06-12
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