Modeling the back gate effects of AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Modeling the back gate effects of AlGaN/GaN HEMTs

Published:2014-08-07 Issue:4 Volume:13 Page:872-876
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Wang Li,Zhang Xuefeng,You Guanjun,Xiong Feng,Liang Lixin,Hu Yong,Chen Aping,Liu Jie,Xu Jian

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-014-0603-y.pdf

Reference17 articles.

1. Shinohara, Keisuke, Regan, Dean C., Tang, Yan, Corrion, Andrea L., Brown, David F., Wong, Joel C., Robinson, John F., Fung, Helen H., Schmitz, Adele, Oh, Thomas C., Kim, Samuel Jungjin, Chen, Peter S., Alexandros, D., Margomenos, Alexandros D., Micovic, Miroslav: Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications. IEEE Trans. Electron Devices 60, 2982 (2013)

2. Chung, W., Hoke, E., Chumbes, E.M., Palacios, T.: AlGaN/GaN HEMT With 300-GHz $$f\text{ max }$$ f max . IEEE Electron Device Lett. 31, 195 (2010)

3. Bouzid-Driad, S., Maher, H., Defrance, N., Hoel, V., De Jaeger, J.-C., Renvoise, M., Frijlink, P.: AlGaN/GaN HEMTs on silicon substrate with 206-GHz $$F_{MAX}$$ F M A X . IEEE Electron Device Lett. 34, 36 (2013)

4. Jessen, Gregg H., Fitch, Robert C., Gillespie, James K., Via, Glen, Crespo, Antonio, Langley, Derrick, Denninghoff, Daniel J., Trejo, Manuel, Heller, Eric R.: Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices. IEEE Trans. Electron Devices 54, 2589 (2007)

5. Palacios, T., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S., Mishra, U.: AlGaN/GaN high electron mobility transistors with InGaN back-barriers. IEEE Electron Device Lett. 27, 13 (2006)

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1. Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics;Micromachines;2021-06-19

2. The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs;Journal of Physics D: Applied Physics;2019-09-02

3. The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor;International Journal of Modern Physics B;2019-07-20

4. AlGaN/GaN HEMTs with 2DHG Back Gate Control;MRS Advances;2017-12-26

5. $$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$ In 0.7 Ga 0.3 As / InAs / In 0.7 Ga 0.3 As composite-channel double-gate (DG)-HEMT devices for high-frequency applications;Journal of Computational Electronics;2017-05-06

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