Passivation of n-GaAs (100) surface by a Langmuir-Blodgett film-Reference-Cited by-同舟云学术

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Passivation of n-GaAs (100) surface by a Langmuir-Blodgett film

Published:1990-05 Issue:5 Volume:50 Page:499-502
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Rao V. J.,Kulkarni V. S.,Katti S. S.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00324574.pdf

Reference19 articles.

1. T. Kobayashi, Y. Shinoda: J. Appl. Phys. 53, 339 (1982)

2. L.G. Meiners, D.L. Lile, D.A. Collins: J. Vac. Sci. Technol 16, 1458 (1979)

3. L.G. Meiners: J. Vac. Sci. Technol. 15, 1402 (1978)

4. Y. Hirota, T. Kobayashi: J. Appl. Phys. 53, 5037 (1982)

5. H.C. Cassey, Jr., A.Y. Cho, D.V. Lang, E.H. Nicollian, P.W. Foy: J. Appl. Phys. 50, 3484 (1979)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical properties of SrF2on GaAs (100) interfaces;Semiconductor Science and Technology;1993-03-01

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