Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4

Published:2021-04-15 Issue:9 Volume:78 Page:816-821
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phys. Soc.

Author:

Shin Minjeong,Lee Mi Jung,Yoon Chansoo,Kim Sohwi,Park Bae Ho,Lee Sungmin,Park Je-Geun

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

https://link.springer.com/content/pdf/10.1007/s40042-021-00154-7.pdf

Reference28 articles.

1. S. Manzeli et al., Nat. Rev. Mater. 2, 17033 (2017)

2. J. Shim et al., Adv. Electron. Mater. 3, 1600364 (2017)

3. Z. Zhang et al., InfoMat. 2, 261–290 (2020)

4. F. Liao et al., ACS Appl. Electron. Mater. 2, 111–119 (2020)

5. B.W.H. Baugher et al., Nano Lett. 13, 4212–4216 (2013)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parameter-free treatment of a layered correlated van der Waals magnet: CrPS4;Physical Review B;2023-10-20

2. Artificial visual perception neural system using a solution-processable MoS2-based in-memory light sensor;Light: Science & Applications;2023-05-05

3. Modulate the Interfacial Oxygen Vacancy for High Performance MoS ₂ Photosensing−Memory Device;Advanced Optical Materials;2022-12-04

4. Research progress of optoelectronic devices based on two-dimensional MoS2 materials;Rare Metals;2022-10-06

5. Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge ₄ Se ₉;Advanced Materials;2022-09-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3