Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s40042-021-00096-0.pdf
Reference21 articles.
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2. X. Mei et al., First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process. IEEE Electron Dev. Lett. 36(4), 327–329 (2015)
3. A. Leuther et al., 20 NM metamorphic HEMT with 660 GHZ FT, in Int. Conf. on IPRM (2011)
4. H.-B. Jo et al., Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz. Appl. Phys. Express 12(5), 54006 (2019)
5. M.W. Pospieszalski, Extremely low-noise amplification with cryogenic FETs and HFETs: 1970–2004. IEEE Microw. Mag. 6(3), 62–75 (2005)
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