Funder
the National Natural Science Foundation of China
the Foundation of Department of Science and Technology of Henan Province
the Foundation of He’nan Educational Committee
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Signal Processing
Reference35 articles.
1. J. Cai, J.B. King, J. Su, C. Yu, S. Chen, L. Sun, H. Wang, J. Liu, Bayesian inference-based behavioral modeling technique for GaN HEMTs. IEEE Trans. Microw. Theory Tech. 67, 6 (2019)
2. K.J. Chen, O. Hberlen, A. Lidow, C.L. Tsai, T. Ueda, Y. Uemoto, Y. Wu, GaN-on-Si power technology: devices and applications. IEEE Trans. Electron Devices 64, 3 (2017)
3. S. Colangeli, A. Bentini, W. Ciccognani, E. Limiti, A. Nanni, GaN-Based robust low-noise amplifiers. IEEE Trans. Electron Devices 60, 10 (2013)
4. G. Crupi, A. Raffo, V. Vadala et al., High-periphery GaN HEMT modeling up to 65 GHz and 200 °C. Solid-State Electron. 152, 11–16 (2018)
5. Q. Dai, N. Liu, Alleviating the problem of local minima in backpropagation through competitive learning. Neurocomputing 94, 152–158 (2012)
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