Large-signal behavior modeling of GaN HEMTs using SSA augmented ELM algorithm-Reference-Cited by-同舟云学术

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Large-signal behavior modeling of GaN HEMTs using SSA augmented ELM algorithm

Published:2023-07-05 Issue:5 Volume:22 Page:1415-1422
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Wang Shaowei^ORCID,Zhang Jincan,Yang Shi,Jin Hao,Xu Binrui,Wang Jinchan,Zhang Liwen

Funder

National Natural Science Foundation of China

Foundation of Department of Science and Technology of Henan Province

Foundation of He’nan Educational Committee

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10825-023-02067-z.pdf

Reference34 articles.

1. Liu, Y., Yu, Q., Du, J.: Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications. J. Comput. Electron. 19, 1527–1537 (2020). https://doi.org/10.1007/s10825-020-01541-2

2. Wang, Z.: Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study. J. Comput. Electron. (2019). https://doi.org/10.1007/s10825-019-01383-7

3. Alshahed, M., et al.: Low-dispersion, high-voltage, low-leakage GaN HEMTs on native GaN substrates. IEEE Trans. Electron Devices 65(7), 2939–2947 (2018). https://doi.org/10.1109/TED.2018.2832250

4. Ma, X., Ma, J., Yang, L.: Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress. Chin. Phys. B 20(6), 067304 (2011). https://doi.org/10.1088/1674-1056/20/6/067304

5. Chen, Z., Xu, Y., Wang, C., Wen, Z., Wu, Y., Xu, R.: A large-signal statistical model and yield estimation of GaN HEMTs based on response surface methodology. IEEE Microwave Wirel. Compon. Lett. 26(9), 690–692 (2016). https://doi.org/10.1109/LMWC.2016.2597196

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