Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian-doping profile for high-performance low-power applications

Author:

Abedini Maryam,Sedigh Ziabari Seyed Ali,Eskandarian Abdollah

Publisher

Springer Science and Business Media LLC

Subject

Pharmaceutical Science,Biomedical Engineering,Medicine (miscellaneous),Bioengineering

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analyze and Optimize the Performance of InGaN-Based DG-JL-TFET Through Efficient Design and Investigation;2024 International Conference on Distributed Computing and Optimization Techniques (ICDCOT);2024-03-15

2. Revolutionizing High Power Electronics: GaN-Based-TFET as the Next Frontier;2024 5th International Conference on Intelligent Communication Technologies and Virtual Mobile Networks (ICICV);2024-03-11

3. RF and linearity analysis of gate engineered dual heterojunction charge plasma TFET with improved ambipolarity;Journal of Materials Science: Materials in Electronics;2024-02

4. Comparative analysis and study the performance of narrow bandgap and wide bandgap material for the homogeneous structure of double gate junctionless tunnel field effect transistor (DG-H-JL-TFET);AIP Conference Proceedings;2024

5. RF Perfomance Based Comprehensive Review on Homo and Hetero Structure of DG-JL-TFET;2023 7th International Conference on Electronics, Communication and Aerospace Technology (ICECA);2023-11-22

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