Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21

Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23)

Published:2006-10 Issue:10 Volume:49 Page:1117-1128
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Voitsekhovskii A. V.,Nesmelov S. N.,Dzyadukh S. M.,Varavin V. S.,Dvoretskii S. A.,Mikhailov N. N.,Sidorov Yu. G.,Vasil’ev V. V.,Zakhar’yash T. I.,Mashukov Yu. P.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-006-0232-4.pdf

Reference21 articles.

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2. V. N. Ovsyuk, G. L. Kuryshev, Yu. G. Sidorov, et al., Array IR Photodetectors [in Russian], Nauka, Novosibirsk, 2001.

3. A. V. Voitsekhovskii and V. N. Davydov, Photoelectrical MIS Structures on the Basis of Narrow-Band Semiconductors [in Russian], Radio i Svyaz’, Tomsk, 1990.

4. G. H. Tsau, A. Sher, M. Madou, et al., J. Appl. Phys., 59, No. 4, 1238 (1986).

5. M. J. Yang, C. H. Yang, M. A. Kinch, and J. D. Beck, Appl. Phys. Lett., 54, No. 3, 265 (1989).

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