Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution
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Published:2014-11-26
Issue:8
Volume:43
Page:552-558
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Author:
Voitsekhovskii A. V.,Nesmelov S. N.,Dzyadookh S. M.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
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