Author:
Druzhinin Anatoly,Maryamova Inna,Kogut Igor,Pankov Yuriy,Khoverko Yuriy,Palewski Tomasz
Reference5 articles.
1. A. Druzhinin, E. Lavitska, I. Maryamova, Y. Khoverko, Laser recrystallized SOI layers for sensor applications at cryogenic temperatures, in Progress in SOI Structures and Devices Operating at Extreme Conditions, edited by F. Balestra et al. (Kluwer Acad. Publ., 2002), pp. 233–237.
2. A. Druzhinin, V. Kostur, I. Kogut et al., Microzone laser recrystallized polysilicon layers on insulator, in Physical and Technical Problems of SOI Structures and Devices, edited by J.P. Colinge et al. (Kluwer Acad. Publ., 1995), pp. 101–105.
3. A. Druzhinin, I. Maryamova, E. Lavitska, Y. Pankov, I. Kogut, Laser recrystallized polisilicon layers for sensor application: electrical and piezoresistive characteization, in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, edited by P.L.F. Hemment et al. (Kluwer Acad. Publ. 2000), pp. 127–135.
4. B.I. Shklovskyi, A.Z. Efros, Electronic Properties of Doped Semiconductors (Heidelberg, Berlin, 1984).
5. B.L. Altshuler, A.G. Aronov, A.I. Larkin, D.E. Khmelnitsky, On the anomalous magnetoresistance in semiconductors, J. Exper. Theor. Fiziks (JETF) 81(2), 768–783 (1981) (in Russian).
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