Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors-Reference-Cited by-同舟云学术

Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors

Published:2013-11 Issue: Volume:854 Page:49-55
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Druzhinin Anatoly¹,Khoverko Yu.¹,Kogut Igor²,Koretskii R.¹

Affiliation:

1. Lviv Polytechniс National University

2. Precarpathian University Named after V.Stephanyk

Abstract

The low temperature studies of SOI-structures have been carried out in a temperature range of 4.2÷300K at magnetic fields up to 14T. The samples with initial boron concentration of about 2.41018сm-3 have been investigated. The results of the studies of SOI-structure conductance at low temperatures in the range of hopping conductance and a possibility to use this material in sensors are analyzed.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.854.49.pdf

Reference16 articles.

1. V.P. Popov, I.V. Antonova, A.A. Francuzov, L.N. Safonov, G.N. Feofanov, O.V. Naumova, D.V. Kilanov, Properties structures and devices of silicon-on-insulator, Semiconductors 35 (2001) 1075-1083.

2. T. Kamins, Polycrystalline silicon for integrated circuits and displays, 2nd ed., Kluwer Academic Publishers, Dordrecht, (1998).

3. C. Claeys and E. Simoen, in: P.L.F. Hemment, V.S. Lysenko, A.N. Nazarov (Eds. ), Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, Kluwer Acad. Publ. 73, Dordrecht, 2000, p.233–247.

4. A. Bulgheroni, M. Caccia, K. Domanski et al., Monolithic active pixel detector realized in silicon on insulator technology, Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 535 (2004) 398–403.

5. V.A. Voronin, I.I. Maryamova, A.A. Druzhinin et al., SOI pressure sensors based on laser recrystallized polysilicon, in: J.P. Collinge (Ed. ), Phys. and Tech. Probl. of SOI Structures and Devices, Kluwer Acad. Publ., Dordrecht, 1995, p.281–286.

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