Laser Recrystallized Polysilicon Layers for Sensor Application: Electrical and Piezoresistive Characterization

Author:

Druzhinin A. A.,Maryamova I. I.,Lavitska E. N.,Pankov Y. M.,Kogut I. T.

Publisher

Springer Netherlands

Reference8 articles.

1. Druzhiain, A., Lavitska, E., Maryamova, I. and Voronin, V. (1997) Mechanical sensors based on laser-recrystallized SOI structures, Sensors and Actuators 61A, 400–404.

2. Druzhinin, A., Lavitska, E., Maryamova, I. and Kogut I. (1997) Laser recrystallization of polysilicon in sensor technology: possibilities and restrictions, in S. Cristoloveanu (ed.), Silicon-on-Insulator Technology and Devices, Electrochemical Soc. Proa, 97-23, Pennington, NJ, pp. 92–97.

3. Seto, J. (1975) The electrical properties of polycrystalline silicon films, J.Appl.Phys. 46, 5247–5254.

4. French, p.J. and Evans, A.G. (1989) Piezoresistance in polysilicon and its application to strain gauges, Solid State Electronics 32, 1–10.

5. Lavitskaya, E.N., Maryamova, I.I., Druzhinin, A.O. and Pankov, Yu.M. (1996) Effects of microstructure on the piezoresistance of thin polysilicon layers, Inorganic Materials 32, 1016–1018.

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields;Advanced Materials Research;2011-07

2. Laser-Recrystallized SOI Layers for Sensor Applications at Cryogenic Temperatures;Progress in SOI Structures and Devices Operating at Extreme Conditions;2002

3. Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields;Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

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