Low-loss carrier-stored IGBT with p-type Schottky diode-clamped shielding layer

Author:

Yi Bo,Zhao Qing,Zhang Qian,Cheng JunJi,Huang HaiMeng,Pan YiLan,Hu XiaoRan,Xiang Yong

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

scholarship from China Scholarship Council

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Reference23 articles.

1. Wang, H., Su, M., Sheng, K.: Theoretical performance limit of the IGBT. IEEE Trans. Electron Devices 64(1), 4184–4192 (2017)

2. Takahashi H, Tomomatsu Y, Sato I: CSTBT (III) as the next generation IGBT. In: Proceeding 2008 IEEE International Symposium on Power Semiconductor Devices and IC’s (ISPSD), pp 72–75, (2008).

3. Hu J, Bobde M, Yilmaz H, Bhalla A: Trench shielded planar gate IGBT (TSPG-IGBT) for low loss and Robust Short-Circuit Capalibity. In: Proceeding 2013 IEEE International Symposium on Power Semiconductor Devices and IC’s (ISPSD), 25–28, 2013.

4. Reigosa PD, Iannuzzo F, Rahimo M, Corvasce C, Blaabjerg F: Increasing emitter efficiency in 3.3 kV enhanced trench IGBTs for higher short-circuit capability”. In: Proceeding 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), pp 1722–1728, (2018).

5. Rahman MT, Kimura K, Fukami T, Konishi M, Nishiwaki T, Saito J, Hamada, K: A novel carrier accumulating structure for 1200V IGBTs without negative capacitance and decreasing breakdown-voltage. In: Proceeding 2008 IEEE International Symposium on Power Semiconductor Devices and IC’s (ISPSD), pp 491–494, (2018).

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Novel High Voltage Low Loss Planar Gate IGBT with Improved p-body Region;2022 IEEE 5th International Conference on Electronics Technology (ICET);2022-05-13

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