Author:
Zhang Zibing,Lu Jing,Chen Qisheng,Prasad V.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Computational Mechanics
Reference15 articles.
1. Chen, Q.S., Prasad, V., Zhang, H., Dudley, M.: Silicon carbide crystals –- Part II: Process physics and modeling. In: K. Byrappa, T. Ohachi (eds.) Crystal Growth Technology, William Andrew/Springer-Verlag, 2003
2. Hofmann, D., Heinze, M., Winnacker, A., Durst, F., Kadinski, L., Kaufmann, P., Makarov, Y., Schäfer, M.: On the sublimation growth of SiC bulk crystals: development of a numerical process model. J. Cryst. Growth, 146, 214–219 (1995)
3. Pons, M., Blanquet, E., J. Dedule, M., Garcon, I., Madar, R., Bernard C.: Thermodynamic heat transfer and mass transport modeling of the sublimation growth of silicon carbide crystals. J. Electrochem. Soc., 143 (11), 3727–3735 (1996)
4. Chen, Q.S., Zhang, H., Ma, R.H., Prasad, V., Balkas, C.M., Yushin, N.K.: Modeling of transport processes and kinetics of silicon carbide bulk growth. J. Cryst. Growth, 225, 299–306 (2001)
5. Müller, St. G., Glass, R.C., Hobgood, H.M., Tsvetkov, V.F., Brady, M., Henshall, D., Jenny, J.R., Malta, D., Carter, C.H. Jr.: The status of SiC bulk growth from an industrial point of view. J. Cryst. Growth, 211, 325–332 (2000)
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献