Impact of Fe Material Thickness on Performance of Raised Source Overlapped Negative Capacitance Tunnel Field Effect Transistor (NCTFET)
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01696-6.pdf
Reference31 articles.
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3. Lee H, Park JD, Shin C (2016) Study of random variation in germanium-source vertical tunnel FET. IEEE Trans Electron Devices 63(5):1827–1834
4. Chauhan V, Samajdar DP (2021) Recent advances in negative capacitance FinFETs for low power applications: a review. IEEE Trans Ultrason Ferroelectr Freq Control 68(10):3056–3068
5. Kim HW, Kwon D (2021) Gate-Normal negative capacitance tunnel field-effect transistor (TFET) with channel doping engineering. IEEE Trans Nanotechnol 20:278–281
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