Geometrical Variability Impact on the Performance of Sub - 3 nm Gate-All-Around Stacked Nanosheet FET

Author:

Yadav NishaORCID,Jadav Sunil,Saini Gaurav

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference28 articles.

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2. Yeung CW, Zhang J, Chao R, Kwon O, Vega R, Tsutsui G, Miao X, Zhang C, Sohn CW, Moon BK, Razavieh A, Frougier J, Greene A, Galatage R, Li J, Wang M, Loubet N, Robison R, Basker V, Yamashita T, Guo D (2018) Channel geometry impact and narrow sheet effect of stacked nanosheet. IEEE Int Electron Devices Meeting (IEDM):28.6.1–28.6.4. https://doi.org/10.1109/IEDM.2018.8614608

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