Design and Performance Enhancement of Gate-on-Source PNPN Doping–Less Vertical Nanowire TFET

Author:

Lal Kritika,Verma Anushka,Kumar Pradeep,Kumar Naveen,Amin S. Intekhab,Anand SunnyORCID

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference21 articles.

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2. Jo J, Shin C (2014) Study of temperature effects on negative capacitance field-effect transistor. IEEK 37:70–72

3. Wu J, Min J, Taur Y (2015) Short-channel effects in tunnel FETs. IEEE Trans Electron Devices 62(9):3019–3024

4. Schaller RR (1997) Moore’s law: past, present and future. IEEE Spectr 34(6):52–59

5. Nirschl Th et al (2004) The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. IEEE, New York

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