Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00817-3.pdf
Reference17 articles.
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2. Mizutani T, Yutaka O, Akita M, Kishimoto S, Maezawa K (2003) A study on current collapse in AlGaN/GaN HEMTs induced by Bias stress. IEEE Trans Electron Dev 50(10):2015–2020
3. Meng Q, Lin Q, Jing W, Han F, Zhao M, Jiang Z (2018) TCAD simulation for nonresonant terahertz detector based on Double-Channel GaN/AlGaN high-Electron-mobility transistor. IEEE Trans Electron Dev 65(11):4807–4813
4. Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri RW, Hussain MA, Saha D (2012) Double-Channel AlGaN/GaN high Electron mobility transistor with Back barriers. IEEE Electron Device Lett 33(12):1690–1692
5. Chiu H-C, Yang C-W, Wang H-C, Huang F-H, Kao H-L, Chien F-T (2013) Characteristics of AlGaN/GaN HEMTs with various field-plate and gate-to-drain extensions. IEEE Trans Electron Dev 60(11):3877–3822
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