Effect of Rapid Heat Treatment on the Crystal Defect Evolution and Electrical Properties of Highly Efficient Polycrystalline Silicon
Author:
Funder
The national natural science foundation
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-018-9904-2.pdf
Reference11 articles.
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2. Hartman K, Bertoni M, Serdy J et al (2008) Dislocation density reduction in multicrystalline silicon solar cell material by high temperature annealing. Appl Phys Lett 93(12):122108
3. Mokhtari M, Fujiwara K, Koizumi H et al (2016) Effect of grain boundary grooves at the crystalmelt interface on impurity accumulation during the unidirectional growth of multicrystalline silicon. Scr Mater 117:73–76
4. Peshcherova SM, Nepomnyashchikh AI, Pavlova LA (2014) The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon. Tech Phys Lett 40(11):1000–1002
5. Luo X, Prakash RR, Chen J et al (2016) Effect of Σ3 generation on random grain boundaries in multicrystalline silicon. Superlattices Microstruct 99:1–4
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1. Effect of High Temperature Annealing on Crystal Structure and Electrical Properties of Multicrystalline Silicon by the Metallurgical Method;Silicon;2019-12-06
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