Effect of High Temperature Annealing on Crystal Structure and Electrical Properties of Multicrystalline Silicon by the Metallurgical Method
Author:
Funder
National Outstanding Youth Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00296-1.pdf
Reference23 articles.
1. Yang YM, Yu A, Hsu B, Hsu WC, Yang A, Lan CW (2015) Development of highperformance multicrystalline silicon for photovoltaic industry. Prog Photovolt Res Appl 23:340–351
2. Di Sabatino M, Stokkan G (2013) Defect generation, advanced crystallization, and characterization methods for high-quality soler-cell silicon[J]. Phys Status Solidi A 210:641–648
3. Mokhtari M, Fujiwara K, Koizumi H et al (2016) Effect of grain boundary grooves at the crystalmelt interface on impurity accumulation during the unidirectional growth of multicrystalline silicon[J]. Scr Mater 117:73–76
4. Prakash RR, Sekiguchi T, Jiptner K, Miyamura Y, Chen J, Harada H, Kakimoto K (2014) Grain growth of cast-multicrystalline silicon growth from small randomly oriented seed crystal. J Cryst Growth 401:717e719
5. Prakash RR, Jiptner K, Jun C, Miyamura Y, Harada H, Sekiguchi T (2015) Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds[J]. Appl Phys Express 8:035502
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