Effect of grain boundary grooves at the crystal/melt interface on impurity accumulation during the unidirectional growth of multicrystalline silicon
Author:
Funder
Kakenhi Grant-in-Aid
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering
Reference15 articles.
1. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration
2. A mechanistic study of impurity segregation at silicon grain boundaries
3. Transition metal co-precipitation mechanisms in silicon
4. Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon
5. The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon
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