Funder
Defence Research and Development Organisation
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference54 articles.
1. Subramani NK, Couvidat J, Hajjar AA, Nallatamby JC, Sommet R, Quéré R (2017) Identification of GaN buffer traps in microwave power AlGaN/GaN HEMTs through low frequency S – parameters measurements and TCAD – based physical device simulations. IEEE J Electron Devices Soc 5(3):175–181
2. Ibbetson JP, Fini PT, Ness KD, DenBaars SP, Speck JS, Mishra UK (2000) Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Appl Phys Lett 77(2):250–252
3. Fletcher ASA, Nirmal D (2017) A survey of gallium nitride HEMT for RF and high power application. Elsevier Superlattices Microst 109:519–537
4. Islam SS, Anwar AFM (2003) Design of GaN/AlGaN HEMT Class – E Power Amplifier Considering Trapping and Thermal Effects, IEEE Lester Eastman Conference on High Performance Devices, pp. 155–163
5. Sahoo DK, Lal RK, Kim H, Tilak V, Eastman LF (2003) High – field effects in silicon nitride Passivated GaN MODFets. IEEE Trans Electron Devices 50(5):1163–1170
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献