Effect of Partial Replacement of Retort with an Insulation Material on Mc-Silicon Grown in Directional Solidification Furnace: Numerical Modeling-Reference-Cited by-同舟云学术

Effect of Partial Replacement of Retort with an Insulation Material on Mc-Silicon Grown in Directional Solidification Furnace: Numerical Modeling

Published:2022-01-15 Issue:13 Volume:14 Page:7871-7878
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Keerthivasan T.,Aravindan G.,Srinivasan M.,Ramaswamy P.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-021-01538-x.pdf

Reference17 articles.

1. Kesavan V, Srinivasan M, Ramasamy P (2019) The influence of multiple heaters on the reduction of impurities in mc-Si for directional solidification. Silicon 11:1335–1344

2. Srinivasan M, Ramasamy P (2013) Modeling on directional solidification of silicon for solar cell applications. IJSR:2319–7064

3. Srinivasan M, Aravindan G, Ramasamy P (2016a) Modeling on control of melt convection during mc-Si growth process under the influence of magnetic field. J Opto Adv Mat 18:1045–1051

4. Srinivasan M, Ramasamy P (2017) Computational modelling on heat transfer study of molten silicon during multi crystalline silicon growth process for PV applications. Silicon 9:7–16

5. Smirnov SA, Kalaev VV (2020) Numerical simulation of the process of preparation of multisilicon by the directional solidification method. Zhurnal Tekhnicheskoi Fiziki 90:1080–1087. https://doi.org/10.1134/S106378422007021X

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current;Silicon;2023-09-04

2. The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation;Journal of Crystal Growth;2023-04

3. Numerical simulation approach to investigate the effect of gas tube design on the impurities distribution and thermal properties of multi-crystalline silicon ingot grown by directional solidification process;Journal of Crystal Growth;2023-02

4. Impurity analysis of the effect of partial replacement of retort with an insulation material on mc-silicon grown in directional solidification furnace: Computational modeling;Journal of Crystal Growth;2022-12

5. Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process;Silicon;2022-11-30