Numerical Simulation of the Process of Preparation of Multisilicon by the Directional Solidification Method-Reference-Cited by-同舟云学术

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Numerical Simulation of the Process of Preparation of Multisilicon by the Directional Solidification Method

Published:2020-07 Issue:7 Volume:65 Page:1036-1043
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Smirnov S. A.,Kalaev V. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

https://link.springer.com/content/pdf/10.1134/S106378422007021X.pdf

Reference15 articles.

1. L. Chen and B. Dai, J. Cryst. Growth 354, 86 (2012).

2. W. Chen, B. Zhou, J. Ding, Y. Yu, H. Dong, G. Zhong, and X. Huang, J. Mater. Sci. Eng. B 6, 201 (2016).

3. Z. Wu, G. Zhong, Z. Zhang, X. Zhou, Z. Wang, and X. Huang, J. Cryst. Growth 426, 110 (2015).

4. B. Zhou, W. Chen, H. Dong, X. Zhou, F. Qi, J. Luo, and X. Huan, J. Mater. Sci. Eng. B 7, 89 (2017).

5. http://www.strsoft.com/products/CGSim/

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Partial Replacement of Retort with an Insulation Material on Mc-Silicon Grown in Directional Solidification Furnace: Numerical Modeling;Silicon;2022-01-15

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