The Influence of Multiple-Heaters on the Reduction of Impurities in mc-Si for Directional Solidification-Reference-Cited by-同舟云学术

The Influence of Multiple-Heaters on the Reduction of Impurities in mc-Si for Directional Solidification

Published:2018-07-20 Issue:3 Volume:11 Page:1335-1344
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kesavan V.,Srinivasan M.,Ramasamy P.

Funder

Ministry of New and Renewable Energy India

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-018-9928-7.pdf

Reference22 articles.

1. Raabe L et al (2011) The effect of graphite components and crucible coating on the behavior of carbon and oxygen in multicrystalline silicon. J Cryst Growth 318:234–238

2. Teng Y-Y et al (2011) Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multi-crystalline silicon ingots by the directional solidification process. J Cryst Growth 318:224–229

3. Liu L et al (2008) Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells. J Cryst Growth 310:2192–2197

4. Li Z et al (2011) Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells. J Cryst Growth 318:304–312

5. David E et al (1995) The effects of Gas-Phase convection on carbon contamination of Czochralski-Grown silicon. J crystal Growth, I. Electrochem Soc, (142) 8:2790–2804

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