Performance Enhancement of Novel Dopingless TFET Using Raised Source and Recessed Drain
Author:
Funder
National Nature Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00665-1.pdf
Reference44 articles.
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2. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479:329–337. https://doi.org/10.1038/nature10679
3. Liu L, Mohata D, Datta S (2012) Scaling length theory of double-gate interband tunnel field-effect transistors. IEEE Trans Electron Devices 59:902–908. https://doi.org/10.1109/TED.2012.2183875
4. Sarkar D, Xie X, Liu W, et al (2015) A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature 526:91–95. https://doi.org/10.1038/nature15387
5. Bayani AH, Dideban D, Vali M, et al (2016) Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects. Semicond Sci Technol 31:045009. https://doi.org/10.1088/0268-1242/31/4/045009
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