Design and Analog/RF Performance Analysis of a Novel Symmetric Raised-Channel SiGe Heterojunction Tunnel Field-Effect Transistor (TFET)
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01113-4.pdf
Reference45 articles.
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3. Gnani E, Gnudi A, Reggiani S, Baccarani G (2013) Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model. Solid-State Electron 84:96–102
4. Abdi DB, Kumar MJ (2014) Controlling ambipolar current in tunnelling FETs using overlapping gate-on-drain. IEEE J. Electron Devices Soc 2(6):187–190. https://doi.org/10.1109/JEDS.2014.2327626
5. Raad B, Nigam K, Sharma D, Kondekar P (2016) Dielectric andwork function engineered TFET for ambipolar suppression and RF performance enhancement. Electron Lett 52(9):770–772. https://doi.org/10.1049/el.2015.4348
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