Assessment of Interface Trap Charges on Proposed TFET for Low Power High-Frequency Application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01616-0.pdf
Reference42 articles.
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4. Saraswat S, Yadav DS, Kumar S, Parmar N, Sharma R, Kumar A (2020) Performance analysis of tmg finfets for low power application with improved analog/rf characteristics, pp 1–5
5. Choi WY, Park B-G, Lee JD, Liu T-JK (2007) Tunneling field-effect transistors (tfets) with subthreshold swing (ss) less than 60 mv/dec. IEEE Electron Device Letters 28(8):743–745
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