An Approach for Drain Current Modeling Including Quantum Mechanical Effects for a DMDG Junctionless Field Effect Nanowire Transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01282-2.pdf
Reference22 articles.
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2. Raibaruah AK, Sarma KCD (2021) A potential model for parallel gated Junctionless field effect transistor. Silicon. https://doi.org/10.1007/s12633-020-00890-8
3. Jazaeri F, Makris N, Saeidi A, Bucher M, Sallese JM (2018) Charge-based model for junction FETs. IEEE Trans Electron Devices 65:2694–2698. https://doi.org/10.1109/TED.2018.2830972
4. Shin YH, Weon S, Hong D, Yun I (2017) Analytical model for Junctionless double-gate FET in subthreshold region. IEEE Trans Electron Devices 64:1433–1440. https://doi.org/10.1109/TED.2017.2664825
5. Bora N, Das P, Subadar R (2016) An analytical universal model for symmetric double gate junctionless transistors. J Nano- Electron Phys 8:02003-1–02003-4. https://doi.org/10.21272/jnep.8(2).02003
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