A Study on Dual Dielectric Pocket Heterojunction SOI Tunnel FET Performance and Flicker Noise Analysis in Presence of Interface Traps
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00488-0.pdf
Reference41 articles.
1. Sarangi S, Bhushan S, Santra A, Dubey S, Jit S, Tiwari PK (2013) A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs. Superlattice Microst 60:263–279
2. Chaudhry A, Kumar MJ (2004) Controlling Short-Channel effects in deep-sub-micron SOI MOSFETs for improved reliability: a review. IEEE Trans Device Mater Reliab 4:99–109
3. Datta S, Liu H, Narayanan V (2014) Tunnel FET technology: a liability perspective. Micro electron. Reliab 54:861–874
4. Ortiz-Conde A, Garcia-Sanchez FJ, Muci J, Sucre-Gonzalez A, Martino JA, Der Agopian PG et al (2014) Threshold voltage extraction in tunnel FETs. Solid State Electron 93:49–55
5. Lu H, Esseni D, Seabaugh A (2015) Universal analytic model for tunnel FET circuit simulation. Solid State Electron 108:110–117
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