Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement-Reference-Cited by-同舟云学术

Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement

Published:2022-11-04 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kumar Kaushal^ORCID,Sharma Subhash Chandra^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-02192-7.pdf

Reference50 articles.

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3. Choi WY, Park BG, Lee JD, Liu TJK (2007) Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28:743–745. https://doi.org/10.1109/LED.2007.901273

4. Ionescu AM (2011) Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nat 4797373(479):329–337. https://doi.org/10.1038/nature10679

5. Gupta SK, Kulkarni JP, Datta S, Roy K (2012) Heterojunction intra-band tunnel FETs for low-voltage SRAMs. IEEE Trans Electron Devices 59:3533–3542. https://doi.org/10.1109/TED.2012.2221127

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