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Complementary tunneling transistor for low power application

  • Published:2004-12 Issue:12 Volume:48 Page:2281-2286
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Wang P.-F.,Hilsenbeck K.,Nirschl Th.,Oswald M.,Stepper Ch.,Weis M.,Schmitt-Landsiedel D.,Hansch W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. International Technology Roadmap for Semiconductors 2002 Update, 2002

2. Single-electron transistors realized in in-plane-gate and top-gate technology;Haug;Solid-State Electron,1994

3. Speed silicon single-electron random access memory;Stone;IEEE Electron Dev. Lett,1999

4. Simulation of the Esaki-tunneling FET;Wang;Solid-State Electron,2003

5. A vertical MOS-gated Esaki tunneling transistor in silicon;Hansch;Thin Solid Films,2000
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