Modified Gate Oxide Double Gate Tunnel Field-Effect Transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01433-5.pdf
Reference40 articles.
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3. Zhang Q, Zhao W, Seabaugh A (2006) Low-subthreshold-swing tunnel transistors. IEEE Electron Device Lett 27(4):297–300
4. Bagga N, Kumar A, Dasgupta S (2017) Demonstration of a novel two source region tunnel FET. IEEE Trans Electron Devices 64(12):5256–5262
5. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy efficient electronic switches. Nature 479:329–337
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