Demonstration of a Novel Two Source Region Tunnel FET-Reference-Cited by-同舟云学术

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Demonstration of a Novel Two Source Region Tunnel FET

Published:2017-12 Issue:12 Volume:64 Page:5256-5262
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bagga Navjeet^ORCID,Kumar Anil,Dasgupta Sudeb^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8103302/08089704.pdf?arnumber=8089704

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel III-V inverted T-channel TFET with dual-gate impact on line tunneling, with and without negative capacitance;Microelectronics Journal;2024-09

2. Performance analysis of highly sensitive vertical tunnel FET for detecting light in near-IR range;Journal of Materials Science: Materials in Electronics;2024-06

3. Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications;Journal of Electronic Materials;2024-05-24

4. Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments;Microsystem Technologies;2024-05-02

5. Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET);Journal of Electronic Materials;2024-03-26

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