Ohmic Junction Based Tunnel FET for High Frequency and Low Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01905-2.pdf
Reference22 articles.
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3. Bangsaruntip S, Cohen GM, Majumdar A, Sleight JW (Sep. 2010) Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Lett. 31(9):903–905. https://doi.org/10.1109/LED.2010.2052231
4. Koswatta SO, Lundstrom MS, Nikonov DE (2009) Performance comparison between p-i-n tunneling transistors and conventional MOSFETs. IEEE Trans Electron Devices 56(3):456–465. https://doi.org/10.1109/TED.2008.2011934
5. Ionescu AM, Riel H (Nov. 2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373):329–337. https://doi.org/10.1038/nature10679
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