Introduce of a New Double Hetero FinFET Based on Charge-Plasma Concept
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-00968-x.pdf
Reference26 articles.
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3. Colinge J, Lee W, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R (2010) Nanowire transistors without junctions. Nat Nanotechnol 5:225–229. https://doi.org/10.1038/nnano.2010.15
4. Veloso A, Keersgieter A, Matagne P, Horiguchi N, Collaert N (2017) Triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance. Mater Sci Semiconductor Process 62:2–12. https://doi.org/10.1016/j.mssp.2016.10.018
5. KumarSingh D, Mondal P, Akram MW (2020) Investigation of statistical variability in non-uniformly doped bulk junctionless FinFET. Mater Sci Semicond Process 113:105041. https://doi.org/10.1016/j.mssp.2020.105041
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