Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure-Reference-Cited by-同舟云学术

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Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

Published:2018-04-24 Issue:1 Volume:11 Page:159-164
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Reddy N. Nanda Kumar,Akkera Harish Sharma,Sekhar M. Chandra,Uthanna S.

Funder

DST FIST

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s12633-018-9840-1/fulltext.html

Reference34 articles.

1. Bestas AN, Yazici S, Aktas F, Abay B (2014) Appl Surf Sci 318:280

2. Aydin ME, Yakuphanoglu F, Eom JH, Hwang DH (2007) Physica B 387:239

3. VanTuyl RL, Liechti CA (1974) IEEE J Solid-State Circuits 9:269

4. An Y, Behnam A, Pop E, Ural A (2013) Appl Phys Lett 102:013110

5. Mohammad SN (2005) J Appl Phys 97:063703

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