Design Considerations and Capacitance Dependent Parametric Assessment of Gate Metal Engineered SiNW MOSFET for ULSI Switching Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00246-x.pdf
Reference29 articles.
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4. Kumar A, Tripathi M, Chaujar R (2018) Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications. Superlattice Microst 116:171–180
5. Kumar A (2017) Effect of trench depth and gate length shrinking assessment on the analog and linearity performance of TGRC-MOSFET. Superlattice Microst 109:626–640
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